论文部分内容阅读
由于大多数器件和功能集合于单片,使微电子领域得到飞速发展;再加上全面的数据处理,更使集成电路的电特性、可靠性以及成本方面得到很大的改善。这些进展都使集成器件的门与管脚的比率增加,集成度的提高可以用增加片子大小,减少器件尺寸、多层结构和电路的革新来达到,而工艺方面的发展将受到本身性质的限制。工艺性质的限制可以分成以下几类:电迁移问题;热电子效应和击穿效应问题;布线的复杂性和样品的敏感性问题;欧姆阻抗和互连问题;门的功率耗散问题。
As most devices and functions are monolithically integrated, the microelectronics market is booming; coupled with comprehensive data processing, the electrical characteristics, reliability and cost of integrated circuits are greatly improved. These developments have led to an increase in the gate-to-pin ratio of integrated devices. Increased integration can be achieved with increased chip size, reduced device size, multilayer structures, and circuit innovations, and process developments are limited by their nature . Limitations of process properties can be divided into the following categories: electromigration problems; hot electron effects and breakdown effects problems; wiring complexity and sample sensitivity issues; ohmic impedance and interconnection problems; and door power dissipation issues.