对Ga As场效应晶体管(FET)进行3个正向和3个负向脉冲(3“+”3“-”)、3个负脉冲(3“-”)、3个正脉冲(3“+”)3种极性静电放电(ESD)实验,不同极性ESD实验下器件的失效阈值不同。以栅源端对为例对实验结果进行分析,在3“+”3“-”和3“-”极性下,器件失效模式为栅源短路,在3“+”极性下器件电参数退化。运用热模型对ESD正负脉冲电压产生的温升进行了计算,器件的损伤机理为,在正向脉冲下为栅金属纵向电迁移导致肖特基势垒退化;在ESD负向脉冲下为高电场引起栅源端对击穿。 Three positive and three negative pulses (3 “+ ” 3 “- ”), three negative pulses (3 “- ”) and three There are three types of positive polarity ESD (Electrode Impulse) experiments with positive pulses (3 “+ ”). The failure thresholds of devices under different polarity ESD experiments are different. The gate-source-end pair is taken as an example to analyze the experimental results. Under the conditions of 3 “- ” and 3 “- ” polarity, the device failure mode is a gate- "Under the polarity of the electrical parameters of the device degradation. The thermal model was used to calculate the temperature rise caused by the positive and negative pulse voltage of ESD. The damage mechanism of the device is that the vertical electromigration of the gate metal leads to the Schottky barrier degeneration under the positive pulse and the high under the ESD negative pulse The electric field causes the gate-source terminal to breakdown.