【摘 要】
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Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 10
【机 构】
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Institute of Physics, Chinese Academy of Sciences, Beijing 100080
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Diamond films (DF) were preliminarily B doped in situ during chemical vapor deposition. Subsequently, the films were implanted with 120keV H+ to dose of 5 × 1014 ～ 5 × 1016cm-2. After the implantation, the B doped DF become insulating and Raman measurements indicate that the implantation has amorphous carbon and graphite etched. It is known that the formation of H-B pairs plays an important pole in property changes. However, for larger dose cases, the electrical resistance of DF is influenced by radiation damage and/or non-diamond phases.In addition to them, annealing makes the specimens conducting again. This phenomenon maybe has potential for application in designing DF device.
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