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SAW器件技术现状的进展要求比目前更好的基片材料。对包括石英衍生物块磷铝矿(AlFO_4)和β-锂霞石(β-LiAlSiO_4),某些磺酸盐和复合材料等的SAW性能计算,得到了比ST切石英的压电祸合大的几种温度补偿的结晶取向。这些材料有可能促使改进性能与温度无关的宽带低插入损耗器件发展。还正在研究改进氮化铝(AlN)的生长方法,因为这种材料的SAW速度约为目前采用材料的两倍,AlN可望使SAW器件的上限频率扩展到2千兆赫以上。
Advances in the state of the art in SAW devices require better substrate materials than is currently available. Comparing the SAW properties of the quartz derivatives, such as AlPO_4, β-LiAlSiO_4, some sulfonates and composites, Several temperature-compensated crystallographic orientations. These materials have the potential to drive the development of broadband low insertion loss devices that improve performance over temperature. Research is also under way to improve the growth of aluminum nitride (AlN) because the SAW speed of this material is about twice that of current materials and AlN is expected to extend the upper limit frequency of SAW devices beyond 2 GHz.