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采用磁控溅射法制备了性能优良的以Pt为缓冲层的 [Co85Cr1 5 Pt]2 0 多层膜 ,研究了溅射气压对 [Co85Cr1 5 Pt]2 0 多层膜微结构和磁性的影响 .研究结果表明 ,Ar溅射气压对 [Co85Cr1 5 Pt]2 0 多层膜的微结构、垂直磁各向异性和矫顽力有重要的影响 .所有样品的有效各向异性常数Keff>0 ,具有垂直磁各向异性 .随着Ar气压增加 ,样品垂直膜面的矫顽力增加 ,但样品有效磁各向异性常数减小 .在 1 6PaAr溅射的Pt(2 0nm) [(Co85Cr1 5(0 5nm) Pt(1 5nm) ]2 0 多层膜 ,矫顽力达到 130kA m ,具有垂直各向异性 ,可作为垂直磁记录介质 .原子力显微镜照片显示 ,随着Ar气压增加 ,表面平均晶粒尺寸和粗糙度均增加 .这是导致多层膜的垂直矫顽力增加和有效磁各向异性常数减小的原因 .
The [Co85Cr1 5 Pt] 2 0 multilayer with Pt buffer layer was prepared by magnetron sputtering. The effect of sputtering pressure on the microstructure and magnetic properties of [Co85Cr1 5 Pt] 2 0 multilayers was investigated. The results show that Ar sputtering pressure has an important effect on the microstructure, perpendicular magnetic anisotropy and coercivity of [Co85Cr1 5 Pt] 2 0 multilayer films.The effective anisotropy constant Keff> 0, With the perpendicular magnetic anisotropy.With the increase of Ar pressure, the coercive force of the vertical film surface increases, but the effective magnetic anisotropy constant of the sample decreases.With the Ar pressure of 16PaAr (20nm) [(Co85Cr1 5 ( 0 5nm) Pt (1 5nm)] 2 0 multilayers with a coercive force of 130kA m and perpendicular anisotropy can be used as perpendicular magnetic recording media. AFM photographs show that as the Ar pressure increases, the average surface grain size Both the size and the roughness are increased, which is responsible for the increase of the vertical coercivity of the multilayer film and the reduction of the effective magnetic anisotropy constant.