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日本电总研最近试制成功了以金属钨作电极、并作离子注入用的掩模的亚微米自对准型的GaAsMESFET,并在9月份举行的1982年秋季第43届应用物理学会学术讲演会上发表了这项成果。器件制作过程如下。首先在非掺杂的半绝缘LEC衬底上,选择注入Se~(80),形成n层;其次,涂6000A厚的PMMA抗蚀剂,用电子束描画法形成栅图形,真空蒸发钨;再次,以该栅作掩模注入Se~(80),在900℃下,在氢气氛中加砷压,进行退火,形成源漏附近的n~+层;最后真空蒸发AuGe/Ni-Au,剥离后在420℃的氢气氛中合金30s,形成源漏电极。器件的栅长为
NEC recently successfully produced a submicron self-aligned GaAsMESFET using tungsten as a metal electrode and a mask for ion implantation, and in the autumn of September 1982 the 43rd Institute of Applied Physics Academic Symposium Published the result. Device manufacturing process is as follows. First, on the non-doped semi-insulating LEC substrate, Se 80 is selectively implanted to form an n layer. Next, a 6000 A thick PMMA resist is patterned by electron beam to form a gate pattern and the tungsten is evaporated in vacuum. , Se ~ (80) is implanted by using the gate as a mask, an arsenic pressure is applied to the hydrogen atmosphere at 900 ° C, and annealing is performed to form an n ~ + layer near the source / drain regions; finally, AuGe / Ni- After that, the alloy was hydrogenated at 420 ° C for 30 s to form source and drain electrodes. The gate length of the device is