【摘 要】
：
Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated,and an InGaN/GaN MQWs solar c
【机 构】
：
Key Lab of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences
论文部分内容阅读
Metalorganic chemical vapor deposition of a crack-free mirror-like surface of InGaN/GaN MQWs on Si (111) substrate is demonstrated,and an InGaN/GaN MQWs solar cell device is fabricated.Photo response measurement of the solar cell devices shows that the fill factor FF=49.4％,open circuit voltage VOC =0.32 V,and short circuit current JSC =0.07 mA/cm2,under AM 1.5 G illumination.In order to analyze the influence of material quality on the performance of solar cells,XRD,SEM and Raman scattering experiments are carried out.It is found that insertion of a proper top AIN layer can effectively improve the material quality,and therefore enhance the photovoltaic performance of the fabricated device.
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