A novel high performance trench field stop(TFS) superjunction(SJ) insulated gate bipolar transistor(IGBT) with a buried oxide(BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. Therefore, conduction modulation in the emitter side of the SJ drift region is enhanced significantly and the carrier distribution in the drift region is optimized for the proposed structure. As a result, compared with the conventional TFS SJ IGBT(Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop(Vce(on)) and an improved tradeoff between Vce(on)and turn-off loss(Eoff), with no breakdown voltage(BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Wp = 2.5 μm and Nn = Np = 3 × 1015cm-3, the Vce(on)and Eoffof the proposed structure are 1.08 V and 2.81 mJ/cm2with the collector doping concentration Nc = 1×1018cm-3and 1.12 V and1.73 mJ/cm2with Nc = 5 × 1017cm-3, respectively. However, with the same device parameters, the Vce(on)and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ/cm2with Nc = 1 × 1018cm-3and 1.98 V and 2.82 mJ/cm2with Nc = 5 × 1017cm-3,respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively. A novel high performance trench field stop (TFS) superjunction (SJ) insulated gate bipolar transistor (IGBT) with a buried oxide (BO) layer is proposed in this paper. The BO layer inserted between the P-base and the SJ drift region acts as a barrier layer for the hole-carrier in the drift region. As a result, compared to the drift region is optimized for the proposed structure with the conventional TFS SJ IGBT (Conv-SJ), the proposed BO-SJ IGBT structure possesses a drastically reduced on-state voltage drop (Vce (on)) and an improved tradeoff between Vce (on) and turn-off loss ), with no breakdown voltage (BV) degraded. The results show that with the spacing between the gate and the BO layer Wo = 0.2 μm, the thickness of the BO layer Lo = 0.2 μm, the thickness of the drift region Ld = 90 μm, the half width and doping concentration of the N- and P-pillars Wn = Vce (on) and Eoffof the proposed structure are 1.08 V and 2.81 mJ / cm2 with the collector doping concentration Nc = 1 × 10 18 cm -3 and 1.12 V and 1.73 mJ / cm2 with Nc = 5 × 1017 cm -3, respectively. However, with the same device parameters, the Vce (on) and Eofffor the Conv-SJ are 1.81 V and 2.88 mJ / cm 2 with Nc = 1 × 10 18 cm -3 and 1.98 V and 2.82 mJ / cm 2 with Nc = 5 × 10 17 cm -3, respectively. Meanwhile, the BV of the proposed structure and Conv-SJ are 1414 V and 1413 V, respectively.