论文部分内容阅读
分布式放大器结构是一种能够实现极宽带宽的放大电路结构。不过由于晶体管自身功率密度的限制,分布式放大器大多用于小信号放大器的设计中。第3代宽禁带半导体GaN具有击穿场强高、输出功率密度大的优点,随着GaN晶体管的发展成熟,将其应用于分布式放大器结构中能够实现宽带功率放大器。本文采用4个GaN HEMT(高电子迁移率晶体管)分立器件进行分布式功率放大器设计,并以混合集成电路工艺加工,实现了0.3～2.5GHz的多倍频程宽带功率放大器。最终得到的测量结果显示,功率放大器在0.3～2.5GHz的频带内,饱和输出功率大于39dBm,线性增益大于8dB,最大PAE大于15%。
The distributed amplifier architecture is an amplifier circuit architecture that enables extremely wide bandwidth. However, due to the transistor’s own power density limit, distributed amplifiers are mostly used in the design of small signal amplifier. The third generation wide band gap semiconductor GaN has the advantages of high breakdown field strength and large output power density. With the development of GaN transistors, it can be used in distributed amplifier structure to realize wideband power amplifier. In this paper, four GaN HEMT (High Electron Mobility Transistor) discrete devices for distributed power amplifier design and hybrid integrated circuit technology to achieve a 0.3 ~ 2.5GHz multi-octave wideband power amplifier. The final measurement results show that the power amplifier in the 0.3 ~ 2.5GHz frequency band, the saturation output power is greater than 39dBm, the linear gain is greater than 8dB, the maximum PAE is greater than 15%.