论文部分内容阅读
介绍了最新发展的粒子数混合超快光谱测量技术，以及采用该技术对自组织生长ＩｎＡｓ／ＧａＡｓ量子点发光动力学的研究结果．实验发现，自组织ＩｎＡｓ／ＧａＡｓ量子点结构的发光寿命大约为１ｎｓ，与ＩｎＡｓ层厚度关系不大；激子寿命与温度有一定的关系，但没有明显的实验证据表明与量子点的δ态密度有关；用粒子数混合技术，实验上可直接观察到量子点中载流子在激发态能级的态填充过程．
Introduced the latest development of particle number hybrid ultrafast spectroscopy, as well as the use of the technology of self-organized InAs / GaAs quantum dot luminescence kinetics results. The experimental results show that the lifetime of the self-organized InAs / GaAs QDs is about 1 ns, which is not related to the thickness of the InAs layer. There is a certain relationship between the exciton lifetime and the temperature, but there is no obvious experimental evidence that the QDs Related to the number of particles mixed technology experimentally observed quantum dots in the excited state energy level state filling process.