,Detailed study of NBTI characterization in 40-nm CMOS process using comprehensive models

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The impact of negative bias temperature instability (NBTI) can be ascribed to three mutually uncorrelated factors,including hole trapping by pre-existing traps (AVHT) in gate insulator,generated traps (ΔVOT) in bulk insulator,and interface trap generation (AVrr).In this paper,we have experimentally investigated the NBTI characteristic for a 40-nm complementary metal-oxide semiconductor (CMOS) process.The power-law time dependence,temperature activation,and field acceleration have also been explored based on the physical reaction-diffusion model.Moreover,the end-of-life of stressed device dependent on the variation of stress field and temperature have been evaluated.With the consideration of locking effect,the recovery characteristics have been modelled and discussed.
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