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在不同实验条件下,用微波等离子体化学气相沉积(MPCVD)技术在Si基体上制备了S掺杂和B-S共掺杂CVD金刚石薄膜,利用X射线衍射仪和拉曼光谱仪研究掺杂对CVD金刚石薄膜的应力影响.研究结果发现,随着S掺杂浓度的增加,薄膜中sp2杂化碳含量和缺陷增多,CVD金刚石薄膜压应力增加;小尺寸的B原子与大尺寸的S原子共掺杂时,微量B的加入改变了CVD金刚石薄膜的应力状态,共掺杂形成B-S复合体进入金刚石晶体后降低金刚石晶体的晶格畸变程度,减少S原子在晶界上偏聚数量和晶体中非金刚石结构相含量,降低由于杂质、缺陷及sp2杂化碳含量产生的晶格畸变和薄膜压应力,提高晶格完整性.
Under different experimental conditions, S-doped and BS co-doped CVD diamond films were prepared on Si substrate by microwave plasma chemical vapor deposition (MPCVD) technique. The effects of doping on the CVD diamond films were investigated by X-ray diffraction and Raman spectroscopy. The results show that with the increase of S doping concentration, the sp2 hybridized carbon content and defects increase and the compressive stress of CVD diamond films increases. Small size B atoms and large size S atoms are co-doped , The addition of micro-B changed the stress state of the CVD diamond film, co-doping to form BS complex into the diamond crystal reduces the degree of lattice distortion of the diamond crystal, reduces the number of segregation of the S atom in the grain boundary and non-diamond Structure phase content, reduce the lattice distortion and film compressive stress due to impurities, defects and sp2 hybrid carbon content, improve the lattice integrity.