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本文的目的是用赝势法研究In_(1-x) Ga_x As_y P_(1-y)的能隙与x和y的函数关系以及它的能带结构.四元合金的赝势参量以二元化合物的赝势参量为边界值由非线性内插公式决定.为了使所得能隙与实验值符合得更好,我们所用的二元化合物的经验的赝势参量与Cohen和Bergstresser所给的值稍有修正.四元合金的晶格常数由线性内插决定.这样所得的计算结果与实验值符合较好.
The purpose of this paper is to study the energy gap and the band structure of the energy gap of In 1-x Ga x As_y P 1-y with x and y using the pseudopotential method.The quasi- The pseudopotential parameters of the compounds are the boundary values determined by the nonlinear interpolation formula.In order to make the obtained energy gap agree well with the experimental data, we know the empirical pseudopotential parameters of the binary compounds used and those of Cohen and Bergstresser There is a correction.The quaternary alloy lattice constant linear interpolation decision, so the results obtained accord with the experimental value is good.