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Ⅳ—Ⅵ族稀土铅盐合金半导体材料PbEuSeTe是实现2～4μm波段范围超低损耗光纤通讯所需的光源及探测器的重要光电功能材料。本文利用稳态及瞬态光电导方法研究了材料中的深能级及其在材料中的作用,认为深能级可能是由于加入铕而引起的晶格缺陷产生的,在材料中主要起复合中心作用。
Ⅳ-Ⅵ Rare Earth Pb-Zn Alloy Semiconductor Materials PbEuSeTe is an important photoelectric functional material for light source and detector required for ultra-low loss optical fiber communication in the 2 ~ 4μm wavelength range. In this paper, the steady-state and transient photoconductive methods are used to study the deep level in materials and their role in the materials. It is believed that the deep level may be due to the lattice defects caused by the addition of europium. Center role.