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在 n+ -Si衬底上用磁控溅射淀积掺 Er氧化硅 (Si O2 :Er)薄膜和掺 Er富硅氧化硅 (Six O2 :Er,x>1 )薄膜 ,薄膜经适当温度退火后 ,蒸上电极 ,形成发光二极管 (LED)。室温下在大于 4V反偏电压下发射了来自 Er3+的 1 .5 4μm波长的红外光。测量了由 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+ -Si样品分别制成的两种 LED,其 Er3+1 .5 4μm波长的电致发光峰强度 ,后者明显比前者强。还发现电致发光强度与 Si O2 :Er/n+ -Si样品和 Six O2 :Er/n+ -Si样品的退火温度有一定依赖关系
An Er-doped silicon oxide (Si O2: Er) thin film and an Er-doped silicon-rich silicon oxide (Six O2: Er, x> 1) thin film were deposited on the n + -Si substrate by magnetron sputtering. , Steamed on the electrode, forming a light-emitting diode (LED). Infrared light of 1.54 μm wavelength from Er3 + was emitted at a reverse bias voltage of more than 4 V at room temperature. Two kinds of LEDs made of Si O2: Er / n + -Si and Six O2: Er / n + -Si samples were measured respectively. The Er3 + 1.54μm Electroluminescence peak intensities were significantly higher than those of the former Strong. It is also found that the electroluminescence intensity has a certain dependence on the annealing temperature of the Si O2: Er / n + -Si sample and the Six O2: Er / n + -Si sample