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用对向靶反应溅射制备的AIN薄膜(Si(100)基片),高气压为(100)取向,低气压下为(002)取向,精确测量XRD衍射峰位可看出AIN薄膜有较大应力.由AIN(100)取向薄膜XPS分析结果可知,AI2P和N1S的结合能分别为73.7eV和396.7eV.对硬度的测量发现AIN薄膜硬度较大,取向对硬度没有影响.
AIN thin film (Si (100) substrate) prepared by opposite target reactive sputtering, (100) orientation under high pressure and (002) orientation under low pressure, Large stress The results of XPS analysis of AIN (100) oriented film showed that the binding energies of AI2P and N1S were 73.7eV and 396.7eV, respectively.The measurement of hardness showed that the hardness of AIN film was larger and the orientation did not affect the hardness.