本文提出了一种新的减小硅外延自掺杂影响的二步外延方法。利用该方法在均匀的重掺As衬底上外延,以10~(14)～10~(18)/cm~3浓度区域计算,获得了≤0.70μm的过渡区宽度,平坦区浓度≤1.5×10~(13)/cm~3,明显小于利用通常的二步外延工艺所得结果。 This paper presents a new two-step epitaxy method to reduce the effect of self-doping of silicon epitaxy. Using this method, the width of the transition region ≤0.70μm was obtained by epitaxial growth on a uniform heavily doped As substrate at the concentration range of 10 ~ (14) ~ 10 ~ (18) / cm ~ 3, the concentration of flat region≤1.5 × 10 ~ (13) / cm ~ 3, which is obviously smaller than that obtained by the usual two-step epitaxial process.