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以废弃的玉米苞叶和正硅酸乙酯(TEOS)为原料,硝酸钴为催化剂,在氩气保护气氛下通过碳热还原反应制备出均匀分布的碳化硅纳米颗粒。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和荧光光谱仪(PL)对所得碳化硅进行表征。结果表明:制得的均匀分布的β-SiC纳米颗粒尺寸介于15~60nm。激发波长为290nm时,样品具有最强的发射峰。当激发波长从290nm增加到330nm时,发射峰位置固定在466nm;当激发波长从330nm增加到390nm时,发射峰位置出现了明显的蓝移。
The disintegrated corn bract and TEOS were used as raw materials and cobalt nitrate was used as a catalyst to prepare uniformly distributed silicon carbide nanoparticles by carbothermal reduction under an argon atmosphere. The obtained SiC was characterized by XRD, SEM, TEM and PL. The results show that the size distribution of β-SiC nano-particles is 15-60nm. When the excitation wavelength is 290nm, the sample has the strongest emission peak. When the excitation wavelength is increased from 290nm to 330nm, the emission peak position is fixed at 466nm. When the excitation wavelength is increased from 330nm to 390nm, there is a clear blue shift of the emission peak.