大多数OLED都用ITO做阳极,为了提高ITO的功函数、改善ITO表面的平整度和减少C的污染,通常要在生长有机材料前对ITO表面进行处理。介绍了目前用等离子体对OLED阳极进行处理的研究现状,给出了Ar、O2、H2、N2、N2O和CF4等离子体处理ITO后对平整度、功函数、接触角和OLED特性等的影响,在他人研究基础上得出结论:用等离子体对OLED阳极进行处理其器件特性不仅与处理ITO表面的气体种类有关,也与产生等离子体的条件有关。采用正交试验方法可优化等离子体处理工艺参数,获得高性能的OLED。 Most OLEDs use ITO as the anode. In order to improve the work function of ITO, improve the flatness of the ITO surface and reduce the pollution of C, the ITO surface is usually processed before the organic material is grown. The present research status of treating anode of OLED with plasma is introduced. The influence of plasma on ITO, flatness, work function, contact angle and OLED properties after ITO is treated with Ar, O2, H2, N2, Based on the research of others, it is concluded that the plasma treatment of the anode of an OLED is not only related to the type of gas used to treat ITO surface, but also to the conditions of plasma generation. Orthogonal test method can be used to optimize plasma process parameters to obtain high performance OLED.