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在半绝缘GaAs光电导开关中发现了光激发电荷畴的猝灭畴模式.分析指出畴猝灭是由于畴在渡越中开关的瞬时电场低于畴的维持电场引起的,并指出在开关电场低于非线性光电导开关阈值电场条件下,在到达阳极前畴的猝灭可导致开关输出电流的振荡频率高于畴的渡越时间频率.根据开关工作电路条件及畴特性给出了猝灭畴模式的等效电路,计算了相应的电路参数,计算结果与实验基本吻合.该研究为提高光注入畴器件的振荡频率及工作效率提供了理论和实验依据.
The quenching domain modes of photoexcited charge domains were found in semi-insulating GaAs photoconductive switches.It is pointed out that the quenching of domains is caused by the fact that the instantaneous electric field of the switching is lower than the sustaining electric field of the domains during the transition, Under the threshold electric field of the nonlinear photoconductive switch, the quenching of the domain before reaching the anode leads to the oscillation frequency of the switching output current being higher than the transit time frequency of the domain.Finally, the quenching domain mode is given according to the switching circuit conditions and domain properties , The corresponding circuit parameters are calculated and the calculated results agree well with the experimental results.The research provides theoretical and experimental evidences for improving the oscillation frequency and working efficiency of light-injection devices.