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应用深能级瞬态谱 (DLTS)技术研究分子束外延 (MBE)生长的highelectronmobilitytransistors (HEMT)和Pseudo morphichighelectronmobilitytransistors (P HEMT)结构深中心行为 .样品的DLTS谱表明 ,在HEMT和P HEMT结构的n AlGaAs层里存在着较大浓度 (10 1 5- 10 1 7cm- 3 )和俘获截面 (10 - 1 6cm2 )的近禁带中部电子陷阱 .它们可能与AlGaAs层的氧含量有关 .同时还观察到P HEMT结构晶格不匹配的AlGaAs InGaAs GaAs系统在AlGaAs里产生的应力引起DX中心 (与硅有关 )能级位置的有序移动 .其移动量可作为应力大小的一个判据 ,表明DLTS技术是定性识别此应力的可靠和简便的工具 .
The deep center behavior of highelectronmobilitytransistors (HEMT) and Pseudo morphichighelectronmobilitytransistors (P HEMT) structures with molecular beam epitaxy (MBE) growth was investigated using deep level transient spectroscopy (DLTS) technique.The DLTS spectra of the samples indicate that in the HEMT and n There is a near-forbidden band central electron trap in the AlGaAs layer with a large concentration of (101-5-1017cm-3) and a capture cross section (10-168cm2), which may be related to the oxygen content of the AlGaAs layer. P HEMT Structure The lattice-mismatched AlGaAs InGaAs GaAs system generates stresses in AlGaAs to cause an orderly movement of energy levels at the DX center (related to silicon), and its displacement can be used as a criterion for the magnitude of stress, indicating that the DLTS technique is A reliable and easy tool to qualitatively identify this stress.