论文部分内容阅读
目的通过失效物理手段得到温度加速寿命试验的失效机理突变点,节省试验样本,并为加速寿命试验的有效性提供保障。方法利用电子产品典型失效物理模型,在求解MOSFET器件激活能的基础上确定失效机理突变点,并开展失效物理分析,从微观分析的角度验证失效机理一致性判定方法的理论正确性和工程适用性。结果 MOSFET器件在温度低于240℃时,失效机理没有发生改变;温度高于240℃时,失效机理发生了改变,与前述失效机理不一致。结论基于失效物理的方法可以确定器件机理发生变化的温度应力点,所需样本量小。
OBJECTIVE To get the mutation point of failure mechanism of temperature accelerated life test by means of failure physics, to save test samples and to provide guarantee for accelerating the validity of life test. Methods The typical failure physics model of electronic products was used to determine the abrupt change point of failure mechanism based on solving the activation energy of MOSFET devices. The failure physics analysis was carried out. The theoretical correctness and engineering applicability of failure mechanism consistency judgment method were verified from the microscopic analysis point of view . Results The failure mechanism did not change when the temperature was lower than 240 ℃. When the temperature was higher than 240 ℃, the failure mechanism changed, which was inconsistent with the failure mechanism. Conclusion Based on the failure physics method, the temperature stress point where the device mechanism changes can be determined. The required sample size is small.