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Self-assembled InAs/GaAs quantum dots covered by the 1-nm InxAl(1-x)As(x = 0.2,0.3)and 3-nm In0.2Gao.8As combination strain-reducing layer are fabricated,whose height can take up to 30-46nm.The luminescence emission at a long-wavelength of 1.33 μm and the energy separation between the ground and the first-excited state of 86meV are observed at room temperature.Furthermore,comparative study proves that the energy separation can increase to 91 meV by multiple stacking.