日本明治大学工学部植草新一郎等运用独创的低温工艺试制成在InP衬底上集成二极管、晶体管和光波导等器件,并证实具有实用价值。InP的电子迁移率、导热率和耐放射线等性能优于GaAs,但由于表面微细加工困难,致使这些优异性能得不到充分利用。由于此次的成果,InP可望在超高速逻辑运算元件、超高频元 Meiji University, Japan’s Department of Engineering, Seiichi Shimizu, etc. using innovative low-temperature technology trial made in the InP substrate integrated diodes, transistors and optical waveguides and other devices, and proved to be of practical value. InP is superior to GaAs in electron mobility, thermal conductivity, and radiation resistance, but these excellent properties are under-utilized due to the difficulty of surface micromachining. As a result of this, InP is expected to operate in ultra-high-speed logic elements, UHF elements