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利用 Ar+束溅射沉积技术实现了 Cd Te薄膜的低温生长 ,利用电化学方法进行了 Hg Cd Te表面自身阳极氧化膜的生长 ,利用生长的 Cd Te介质膜和 Hg Cd Te表面自身阳极氧化膜对 n- Hg Cd Te光导器件进行了表面钝化 .对两种器件的电阻、各项性能指标进行了测量分析 ,实验表明得到的 Cd Te/ Hg Cd Te界面质量已达到器件实用化水平 .
The growth of CdTe thin films was achieved by Ar + beam sputtering deposition technique. The growth of self-anodic oxide films on Hg Cd Te surface was investigated by electrochemical method. The growth of CdTe dielectric films and Hg CdTe self-anodic oxide films The surface passivation of n-Hg Cd Te photoconductors was investigated.The resistance and performance of the two devices were measured and analyzed.The experimental results show that the quality of Cd Te / Hg Cd Te interface has reached the practical level.