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采用射频磁控反应溅射技术,以Er2O3和Si为靶材,制备了SiOx∶Er薄膜材料,在不同温度和不同时间下进行退火处理,室温下测量了样品的光致发光(PL)谱,观察到Er3+在1 530,1 542和1 555 nm处波长的发光,发现退火能明显增强Er3+的发光。研究了退火温度和时间对SiOx∶Er薄膜光致发光的影响,发现Er2O3与Si面积比为1∶1时,1 100℃下20 min退火为样品的最佳退火条件。采用XRD和材料光吸收测试对样品结构和光学性质进行了研究,得到样品中Si晶粒大小为1.6 nm,样品的光学带隙为1.56 eV。对3种不同Er2O3与Si面积比的SiOx∶Er薄膜材料进行研究,得到Er2O3与Si面积比为1∶3为样品的最佳配比,对薄膜材料发光现象进行了探讨。
The films of SiOx:Er were prepared by RF magnetron reactive sputtering with Er2O3 and Si as targets. The samples were annealed at different temperatures and different temperatures. The photoluminescence (PL) spectra were measured at room temperature. The emission of Er3 + at wavelengths of 1 530, 1 542 and 1 555 nm was observed and it was found that annealing can significantly enhance the emission of Er3 +. The effect of annealing temperature and time on the photoluminescence of SiOx: Er thin films was investigated. The optimum annealing conditions were obtained when the area ratio of Er2O3 to Si was 1: 1, annealing at 100 ℃ for 20 min. The structure and optical properties of the samples were investigated by XRD and optical absorption spectroscopy. The results show that the Si grain size is 1.6 nm and the optical band gap of the sample is 1.56 eV. Three kinds of SiOx: Er thin films with different area ratios of Er 2 O 3 and Si were investigated. The optimal ratio of Er 2 O 3 to Si was 1: 3, and the luminescence of thin films was discussed.