用同步辐射光电发射谱 (SRPES)和XPS研究了室温下Gd膜在Ni(1 1 0 )上的生长和Gd Ni界面的电子结构以及它们的氧化现象 .发现Gd膜在高覆盖度时Gd 4f为双峰结构 ,高温退火使 4f双峰退为单峰 .氧在 3.7nm的Gd膜上的吸附引起Gd 4f双峰中高结合能峰的衰减 ,在 0L～ 5 0L的氧暴露量范围内 ,只存在单一的晶格氧物种 .在轻微氧化的Gd Ni复合薄膜上 ,氧吸附引起Gd向表面的偏析和进一步氧化 ,并存在化学吸附氧 (O-)和晶格氧两种氧物种 .本文对Gd 4f双峰的起源 ,Gd氧化机理以及氧物种的本质进行了讨论 The growth of Gd film at room temperature and the electronic structure of Gd Ni interface at room temperature and their oxidation phenomena were studied by using SRPES and XPS. It was found that Gd 4f at high coverage Is a bimodal structure, and the annealing at high temperature retreats the 4f doublet to a single peak.The adsorption of oxygen on the 3.7nm Gd film causes the decay of the high binding energy peak of the doublet peak Gd 4f. Within the range of 0L to 500L oxygen exposure, Only a single lattice oxygen species exists on the slightly oxidized Gd Ni composite film, oxygen adsorption causes Gd surface segregation and further oxidation, and the presence of chemisorbed oxygen (O) and lattice oxygen two oxygen species. The origin of Gd 4f bimodal, Gd oxidation mechanism and the nature of oxygen species are discussed