本文用SF_6和CHF_3气体对热氧化生长的SiO_2进行等离子刻蚀新工艺研究,根据SF_6和CHF_3对二氧化硅及硅刻蚀速率和选择的不同,采用SF_6:CHF_3为1:1.5和1:25两种流量比,经过两步等离子刻蚀工艺,获得了0.8μm的线条,经测量结果表明,刻蚀不均匀性小于5％,选择性大于8。SEM剖面照片也表明线条边缘清晰,刻蚀平整。 In this paper, the thermal oxidation growth of SiO_2 by SF_6 and CHF_3 gas was studied by plasma etching. According to the different etch rate and choice of silicon dioxide and silicon for SF_6 and CHF_3, SF_6: CHF_3 was used as 1: 1.5 and 1:25 The ratio of the two fluxes is 0.8μm after two steps of plasma etching process. The measured results show that the etching unevenness is less than 5% and the selectivity is greater than 8. The SEM cross-section photo also shows that the lines have sharp edges and a smooth etch.