超薄体SOI器件能够有效抑制短沟道效应,业界认为在纳米器件时代它有可能取代传统体硅器件。但SOI器件的全局化埋氧层特性会使其产生自加热效应,严重时会导致器件开态电流下降、漏电流增加,从而导致器件可靠性降低。具有局部空洞层或介质层的SON器件及其制备方法已成为纳米器件时代的一个研究热点。阐述了SON器件的基本概念,比较了SON器件和传统体硅器件的电学特性。对SON器件的工艺制备方法进行了全面描述,包括早期的SON器件制备方法、基于MSTS的SON制备方法、气体注入SON制备方法,以及完全自对准SON器件制备方法。详细描述了准自对准气体注入SON器件和完全自对准SON器件制备方法的工艺流程。 Slim SOI devices can effectively suppress the short channel effect, the industry believes that it is possible in the nano-device era to replace the traditional bulk silicon devices. However, the globalized buried oxide layer characteristics of SOI devices will cause self-heating effect. In severe cases, the on-state current of the devices will decrease and the leakage current will increase, resulting in lower device reliability. SON devices with localized cavities or dielectric layers and their fabrication methods have become a research hotspot in the age of nanodevices. The basic concepts of SON devices are expounded, and the electrical characteristics of SON devices and conventional bulk silicon devices are compared. The preparation methods of SON devices are described in detail, including the preparation methods of early SON devices, the SON preparation methods based on MSTS, the SON preparation methods of gas injection and the preparation methods of fully self-aligned SON devices. Detailed description of the quasi-self-aligned gas injection SON devices and fully self-aligned SON device preparation process flow.