一、引言制造集成电路的工艺周期长又复杂,在各个制造工艺中影响最终的电特性的主要因素很多。为了提高集成电路的电特性,找到这些因素以改进工艺是很必要的。其中一个重要的因素是晶体的缺陷和形变。硅单晶本来是缺陷很少的晶体,然而在集成电路制造工艺中引进的晶体缺陷却非常多。要作成理想的无缺陷器件是不可能的。杂质的扩散是头一个问题,在高温高浓度的杂质扩散中要产生很多的位错和析出。另外,由于氧化膜 I. INTRODUCTION The process cycle of manufacturing integrated circuits is long and complex. There are many main factors that affect the final electrical characteristics in various manufacturing processes. In order to improve the electrical characteristics of integrated circuits, it is necessary to find these factors to improve the process. One of the important factors is the crystal defects and deformation. Silicon single crystal was originally a crystal with few defects, however, there were many crystal defects introduced in the integrated circuit manufacturing process. It is impossible to make a perfect, defect-free device. The first problem is the diffusion of impurities. Many dislocations and precipitations are generated in the diffusion of impurities at high temperature and high concentration. In addition, due to the oxide film