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本文介绍了在研制16位微处理机Z8000CPU电路中,采用工艺模拟与实测相结合的方法,研究E/D MOS阈值电压与硼、砷注入能量和剂量间的关系及其相互影响.结果表明,工艺模拟计算值与实验测量值相当吻合.
This paper introduces the method of combining process simulation with actual measurement in the development of a 16-bit micro-processor Z8000CPU circuit to study the relationship between E / D MOS threshold voltage and boron and arsenic implantation energies and doses and their mutual effects.The results show that, The simulated process values are in good agreement with the experimental measurements.