带间耦合多有源区大功率980 nm半导体激光器

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提出利用隧道结实现带间耦合再生多有源区大光腔大功率的半导体激光器。该激光器能够在小的电流下输出大的光功率;同时可以使出光端面成倍增加,减少了端面出光密度,克服端面灾变性毁坏(COD)。由于耦合形成大光腔,提高了光输出的质量。制备4个有源区带间耦合大功率980nm半导体激光器,在2A注入电流下输出光功率5W,阈值电流172mA,斜率效率3.24W/A,阈值电流密度273A/cm2。 A semiconductor laser with large power cavity and large power of multi-active area coupling regeneration is proposed. The laser can output a large optical power at a small current; and at the same time, the exiting optical surface can be doubled, the exiting optical density of the surface can be reduced, and the end surface catastrophic destruction (COD) can be overcome. Due to the coupling forming a large cavity, the quality of the light output is improved. Four active band-coupled high power 980nm semiconductor lasers were fabricated. The output optical power was 5W at 2A injection current, the threshold current was 172mA, the slope efficiency was 3.24W / A and the threshold current density was 273A / cm2.
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