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与时间相关电介质击穿 (TDDB)测量是评估厚度小于 2 0nm薄栅介质层质量的重要方法 .氧化层击穿前 ,隧穿电子和空穴在氧化层中或界面附近产生陷阱、界面态 ,当陷阱密度超过临界平均值 ρbd时 ,发生击穿 .击穿电量Qbd值表征了介质层的质量 .Qbd值及其失效统计分布与测试电流密度、电场强度、温度及氧化层面积等有定量关系 .TDDB的早期失效分布可以反映工艺引入的缺陷 .TDDB可以直接评估氧化、氮化、清洗、刻蚀等工艺对厚度小于 10nm的栅介质质量的影响 .它是硅片级评估可靠性和预测EEPROM擦写次数的重要方法 .
Time Dependent Dielectric Breakdown (TDDB) measurements are an important way to evaluate the quality of thin gate dielectric layers with thicknesses less than 200 nm. Before the oxide breakdown, tunneling electrons and holes create traps in or near the oxide layer, interface states, The breakdown occurs when the trap density exceeds the critical average value ρbd. The Qbd value of the breakdown charge characterizes the dielectric layer. The statistical distribution of Qbd and its failure have a quantitative relationship with the test current density, electric field strength, temperature and oxide area The early failure distribution of TDB can reflect the defects introduced by the process.DDB can directly evaluate the effect of oxidation, nitriding, cleaning, etching and other processes on the gate dielectric thickness of less than 10nm.It is a silicon-level evaluation of reliability and prediction of EEPROM An important way to erase the number of times.