【摘 要】
：
用化学气相输运(CVT)方法合成了直径在20～120 nm呈单晶结构的ZnO纳米线.利用场发射扫描电镜(FESEM)、高分辨透射电镜(HRTEM)以及选区电子衍射(SAED)等技术对ZnO纳米线的生长机
【机 构】
：
中国科技大学国家同步辐射实验室,国家纳米科学中心,中国科学院高能物理研究所同步辐射中心
【基金项目】
：
Key Research Project for High Level University Construction
论文部分内容阅读
用化学气相输运(CVT)方法合成了直径在20～120 nm呈单晶结构的ZnO纳米线.利用场发射扫描电镜(FESEM)、高分辨透射电镜(HRTEM)以及选区电子衍射(SAED)等技术对ZnO纳米线的生长机理和结构进行了系统研究,结果表明,纳米线的成核与Au-Zn合金催化颗粒的饱和度有直接的关系,先饱和的颗粒上纳米线首先成核.纳米线顶端合金颗粒组成的变化是导致纳米线生长终止的重要原因,大量纳米线的生长不是同时进行的.本工作提供了支持纳米线气液固(V-L-S)生长机理的新实验证据,提出了氧化物纳米线的生长机理.
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