FD-SOI制程决胜点在14nm

来源 :半导体信息 | 被引量 : 0次 | 上传用户:zjzzhength
下载到本地 , 更方便阅读
声明 : 本文档内容版权归属内容提供方 , 如果您对本文有版权争议 , 可与客服联系进行内容授权或下架
论文部分内容阅读
产业资深顾问Handel Jones认为,半导体业者应该尽速转移14纳米FD-SOI(depleted silicon-on-insulator)制程,利用该技术的众多优势…半导体与电子产业正努力适应制程节点微缩至28纳米以下之后的闸成本(gate cost)上扬;在制程微缩同时,每单位面积的逻辑闸或电晶体数量持续增 Handel Jones, a senior consultant for the industry, believes that the semiconductor industry should speedily shift its 14-nanometer FD-SOI process to take advantage of the many advantages of the technology ... The semiconductor and electronics industries are struggling to adapt their process nodes down to 28 nanometers The gate cost goes up. At the same time as the manufacturing process is shrinking, the number of logic gates or transistors per unit area continues to increase
其他文献