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用磁控溅射法淀积的非合金膜系Au_Pt_Ni/ p_InP( 1～ 2× 1 0 18cm-3 ) ,在 40 0℃ 30s的退火条件下 ,实现了比接触电阻低达 3× 1 0 -6Ω·cm2 的欧姆接触 .对不同温度 ( 30 0～ 5 0 0℃ )退火的Au_Pt_Ni/ p_InP欧姆接触所做的AES深度剖面分析揭示了Pt膜层阻挡Au的内扩散和InP外扩散的作用 .
The non-alloy film Au_Pt_Ni / p_InP (1 ~ 2 × 10 18 cm-3) deposited by magnetron sputtering method has lower contact resistance than 3 × 10 ~ 6Ω · cm 2 .An AES depth profile analysis of Au_Pt_Ni / p_InP ohmic contacts annealed at different temperatures (30 0 ~ 5000 ℃) revealed the effect of the Pt film blocking the internal diffusion of Au and the diffusion of InP.