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亚微米全耗尽 SOI( FDSOI) CMOS器件和电路经过工艺投片 ,取得良好的结果 ,其中工作电压为 5V时 ,0 .8μm全耗尽 CMOS/ SOI1 0 1级环振的单级延迟仅为 45ps;随着硅层厚度的减薄和沟道长度的缩小 ,电路速度得以提高 ,0 .8μm全耗尽 CMOS/ SOI环振比 0 .8μm部分耗尽 CMOS/ SOI环振快 30 % ,比 1 μm全耗尽 CMOS/ SOI环振速度提高 1 5% .
The submicron fully depleted SOI (FDSOI) CMOS devices and circuits have achieved good results with process-based optoelectronics, with a single-stage delay of 0.8 μm of fully depleted CMOS / SOI1 0 1 -order ringing at 5V 45ps; With the thinning of the silicon layer and the reduction of the channel length, the speed of the circuit can be improved. The 0.8μm fully depleted CMOS / SOI ring oscillator has a ringing ratio of 0.8μm and the CMOS / SOI ring oscillates 30% 1 μm fully depleted CMOS / SOI ring vibration speed increased by 15%.