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采用自行研制的立式MOCVD生长系统 ,以TMGa、TEGa为Ga源 ,在不同的生长条件下生长GaN单晶膜。然后对样品进行室温光致发光光谱测试、范德堡霍尔测量和X射线双晶衍射测试。实验结果表明 ,缓冲层的Ga源不同对GaN单晶膜质量影响很大 ;以TEGa为Ga源生长缓冲层及外延层 ,外延层不连续 ;以TMGa为缓冲层Ga源、TEGa为外延层Ga源 ,在此得到室温载流子浓度为 4 5× 1 0 17cm-3 ,迁移率为 1 98cm2 /V·s的电学性能较好的GaN单晶膜。研究结果表明 :使用TEGa为外延层Ga源生长GaN ,能有效地抑制不期望的蓝带的出现。
Vertical MOCVD growth system developed by ourselves is used to grow GaN single crystal film under different growth conditions using TMGa and TEGa as Ga source. The samples were then subjected to room temperature photoluminescence spectroscopy, Vanderbilt Hall measurements and X-ray double crystal diffraction tests. The experimental results show that the Ga source of the buffer layer has a great effect on the quality of the GaN single crystal film. The buffer layer and the epitaxial layer are grown by using TEGa as the Ga source, the epitaxial layer is discontinuous, the Ga source is the TMGa buffer layer, and the TEGa is the epitaxial layer Ga Source, where a GaN single crystal film with good electrical properties with a carrier concentration of 4 5 × 10 17 cm -3 at room temperature and a mobility of 1 98 cm 2 / V · s was obtained. The results show that using TEGa to grow GaN for epitaxial layer Ga source can effectively suppress the occurrence of unwanted blue band.