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本文研究了Si注入GaAs的快速退火(RTA)特性。得出930—950℃退火5s为最佳退火条件。测量结果表明,当注入剂量大于10~(13)cm~(-2)时,电子浓度呈饱和现象。为提高电子浓度本文提出Si,As双注入GaAs的方法,研究了(60—80)keV,(5—10)×10~(14)Si/cm~2+(150—180)keV,(5—30)×10~(14)As/cm~2注入并经RTA后的电特性。结果表明,双注入后样品中电子浓度有明显提高,对80keV,10~(15)Si/cm~2+150keV,3×10~(15)As/cm~2来说,电子浓度大于10~(19)cm~(-3)。TEM观察表明,双注入样品的剩余缺陷密度大大低于单注入的情况。本文并对双注入补偿机理进行了讨论。
In this paper, the rapid annealing (RTA) characteristics of Si implanted GaAs are studied. It is concluded that annealing at 930-950 ℃ for 5s is the best annealing condition. The measurement results show that when the dose is greater than 10 ~ (13) cm ~ (-2), the electron concentration is saturated. In order to increase the electron concentration, a new method of implanting Si and As into GaAs was proposed. The effects of (60-80) keV, (5-10) × 10-14 Si / cm 2 + (150-180) keV, -30) × 10 ~ (14) As / cm ~ 2 after injection and after RTA electrical properties. The results showed that the electron concentration in the sample after double injection increased obviously. For the 80 keV, 10 ~ (15) Si / cm ~ 2 +150 keV and 3 × 10 ~ (15) As / cm ~ (19) cm ~ (-3). TEM observations showed that the residual defect density of the double implanted samples was much lower than that of single implants. This paper also discusses the double injection compensation mechanism.