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在无蒸馏和无惰性气氛保护的条件下,快速制备了用于组合合成Pb(ZrxTi1-x)O3薄膜的前驱溶液PT和PZ。采用组合法在Pt/Ti/SiO2/Si衬底上制备了一系列Pb(ZrxTi1-x)O3组分梯度薄膜。经XRD分析表明,薄膜具有钙钛矿结构,择优取向为(111)。SEM结果显示薄膜厚度在500nm左右。电滞回线的测试表明,下梯度薄膜PZT-654表现出良好的铁电性能,明显优于其它薄膜。PZT-654梯度薄膜的剩余极化强度Pr为38.4μC/cm2,矫顽场Ec为75.0kV/cm,有较大的极化偏移,Poffset为12.9μC/cm2,表现出梯度铁电薄膜的特性。
The precursor solutions PT and PZ for the combined synthesis of Pb (ZrxTi1-x) O3 thin films were rapidly prepared without distillation and under inert atmosphere protection. A series of graded Pb (ZrxTi1-x) O3 thin films were deposited on Pt / Ti / SiO2 / Si substrate by the combination method. XRD analysis showed that the film has a perovskite structure, the preferred orientation (111). SEM results show that the film thickness is about 500nm. The test of hysteresis loop shows that PZT-654 has good ferroelectric properties and is obviously better than other films. The remanent polarization Pr of the PZT-654 gradient film was 38.4μC / cm2, the coercive field Ec was 75.0kV / cm, the polarization shift was large, and the Poffset was 12.9μC / cm2, indicating that the gradient ferroelectric thin films characteristic.