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据日本《电子材料》1992年第10期报道,日本夏普公司已制成780nm大功率半导体激光器,可用作光盘高速记录,并能省去用于目前光发射器的光束整形棱镜。这种激光器,把激光器壁的开口处作为窗层,生长AlGaAs层。该公司采用独特的技术——端面生长法,因适用于光密度比以前高的窄条结构,在低的椭圆率(2)时,光输出功率70mW,连续工作4000小时(环境温度为60℃),已达到世界最高实用化水平。 若该激光器适用于光盘系统,就能获得以下性能: (1)因光输出功率大(70mW),光盘的记录可高速化。 (2)由于激光束截面强度分布更接近于圆(椭圆率为2),可省去光束整形的棱镜,能使光发射器简单化、轻量化。 (3)因为器件寿命长,可提高系统的可靠性等。
According to Japan’s “Electronic Materials” No. 10 of 1992 reported that Japan’s Sharp Corporation has made 780nm high-power semiconductor lasers can be used as high-speed optical disc recording, and can save the beam shaping prism for the current light emitter. This laser, with the opening of the laser as a window layer, grows the AlGaAs layer. The company uses a unique technology - the end-face growth method, which is suitable for narrow-band structures with higher optical densities than ever before. At low ellipticity (2), the optical output power is 70mW and continuous operation for 4,000 hours (ambient temperature is 60 ° C ), Has reached the highest practical level in the world. If the laser is suitable for optical disc systems, the following properties can be obtained: (1) Due to the large optical output power (70 mW), the recording speed of the optical disc can be increased. (2) Since the laser beam cross-section intensity distribution is closer to the circle (ellipticity is 2), the beam shaping prism can be omitted and the light emitter can be simplified and reduced in weight. (3) Because of the long life of the device, it can improve the reliability of the system.