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n型纳米非对称双栅隧穿场效应晶体管(DG-TFET)速度快、功耗低,在高速低功耗领域具有很好的应用前景,但其阈值电压的表征及其模型与常规MOSFET不同。在深入研究n型纳米非对称DG-TFET的阈值特性基础上,通过求解器件不同区域电场、电势的方法,建立了n型纳米非对称DG-TFET器件阈值电压数值模型,探讨了器件材料物理参数以及漏源电压对阈值电压的影响,通过与Silvaco Atlas的仿真结果比较,验证了模型的正确性。研究表明,n型纳米非对称DG-TFET的阈值电压分别随着栅介质层介电常数的增加、硅层厚度的减薄以及源漏电压的减小而减小,而栅长对其阈值电压的影响有限。该研究对纳米非对称DG-TFET的设计、仿真及制造有一定的参考价值。
The n-type nano-asymmetric dual-gate tunneling field effect transistor (DG-TFET) has high speed and low power consumption and has good application prospects in the field of high speed and low power consumption. However, its threshold voltage is characterized and its model is different from the conventional MOSFET . Based on the study of threshold characteristics of n-type asymmetric DG-TFET, the threshold voltage model of n-type asymmetric DG-TFET was established by solving the electric field and potential in different regions of the device. The physical parameters of the device material And the effect of drain-source voltage on the threshold voltage, the correctness of the model is verified by comparison with the simulation results of Silvaco Atlas. The results show that the threshold voltage of the n-type nano-asymmetric DG-TFET decreases with the increase of the dielectric constant of the gate dielectric layer, the decrease of the thickness of the silicon layer and the decrease of the source-drain voltage, respectively. However, The impact is limited. The research has certain reference value for the design, simulation and manufacture of nano-asymmetric DG-TFET.