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研究了一种光纤通讯用光电探测器。在GaAs上蒸镀800nm的Ge，并在此材料基础上提出了一种吸收倍增分离的雪崩二极管（SAM－APD）的结构设计，采用GaAs作为倍增区，Ge作为吸收区。在此结构上初步制作的二极管正向开启电压为0.2～0.3V，反向击穿电压为2.5V，漏电不明显，p－n结特性良好。
A photodetector for optical fiber communication is studied. Based on this material, an avalanche-separated avalanche diode (SAM-APD) is proposed. The structure of GaAs is multiplied and Ge is taken as the absorption region. In this structure, the initial production of the diode forward turn-on voltage of 0.2 ~ 0.3V, reverse breakdown voltage of 2.5V, leakage is not obvious, p-n junction characteristics are good.