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提出了基于电子散斑干涉技术(ESPI)可预估局部温度最高区域的加速寿命预测方法。实验通过对芯片样品进行了动态工作模式下的功耗评估,预估了芯片局部温度最高的热源区域,尔后对此区域进行去封装处理;在芯片去封装区域,分别测出常温和高温环境下芯片动态工作模式的裸片表面温度,以此数据作为Arrhenius模型中加速因子的结温,求出加速因子;最后,根据实验得出芯片在高温环境下的寿命时间,即可推出其在正常工作条件下的寿命。结果表明,这种方法具有准确、快速和简单的特点,可广泛应用于微电子器件的正常工作寿命预测。
An accelerated life prediction method based on electronic speckle speckle interferometry (ESPI) is proposed to predict the highest local temperature. In the experiment, the power consumption of the chip samples under dynamic working mode was evaluated to predict the heat source area with the highest local temperature of the chip, and then the area was de-encapsulated. In the chip de-encapsulation area, ambient temperature and high temperature were measured respectively Chip dynamic mode of the die surface temperature, the Arrhenius model as the acceleration factor junction temperature data to find the acceleration factor; Finally, according to the experiment obtained chips in the high temperature environment of the life time, you can launch its normal work Life under conditions. The results show that this method is accurate, fast and simple, which can be widely used in the prediction of the normal working life of microelectronic devices.