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采用溶胶-凝胶工艺与原位生长技术,制备了ZnSe/SiO_2复合薄膜.X射线衍射分析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1∶1·01—1∶1·19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌,结果表明复合薄膜表面既存在尺寸约为400nm的ZnSe晶粒,也存在尺寸小于100nm的nSe晶粒.利用椭偏仪测量了薄膜椭偏角Ψ,Δ与波长λ的关系,采用Maxwell-Garnett有效介质理论对薄膜的光学常数、厚度、气孔率、ZnSe的浓度进行了数据拟合.利用荧光光谱分析了薄膜的光致发光,结果表明在波长为395nm的激发光下,487nm的发射峰对应着闪锌矿型ZnSe的带边发射,同时也观测到薄膜中ZnSe晶体增强的自由激子发射及伴随着ZnSe晶体缺陷而产生的辐射发光.
The ZnSe / SiO_2 composite films were prepared by sol-gel process and in-situ growth technique. X-ray diffraction analysis showed that the ZnSe crystals in the films were cubic sphalerite. The X-ray fluorescence analysis showed that the molar ratio of Zn to Se 1: 1 · 01-1: 1 · 19. The surface morphology of the composite films was observed by field emission scanning electron microscopy. The results show that there are both ZnSe grains about 400nm in size and nSe The relationship between the ellipsometric angle Ψ, Δ and the wavelength λ was measured by ellipsometry, and the optical constants, thickness, porosity and ZnSe concentration of the films were fitted by Maxwell-Garnett effective medium theory. Fluorescence spectra were used to analyze the photoluminescence of the films. The results showed that the emission peak at 487nm corresponds to the band edge emission of sphalerite ZnSe under excitation light with a wavelength of 395nm. At the same time, the enhanced free excitons Emitted and accompanied by ZnSe crystal defects arising from the radiation glow.