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采用直流磁控反应溅射在Si(1 0 0 )衬底上溅射得到 (0 0 1 )取向的V2 O5薄膜 .x射线衍射 (XRD)、扫描电镜 (SEM)和傅里叶变换红外光谱 (FTIR)的结果表明 ,氧分压影响薄膜的成分和生长取向 ,在氧分压 0 4Pa时溅射得到 (0 0 1 )取向的纳米V2 O5薄膜 ,即沿c轴垂直衬底方向取向生长的薄膜 .V2 O5薄膜经过真空退火得到 (0 0 1 )取向的VO2 薄膜 ,晶体颗粒长大 .对薄膜的分子结构和退火过程的晶格转换进行了分析 ,证实了氧分压对薄膜晶体结构的影响
The (001) oriented V2 O5 thin films were sputtered on Si (100) substrates by DC magnetron reactive sputtering. X-ray diffraction (XRD), scanning electron microscopy (SEM) and Fourier transform infrared spectroscopy (FTIR) results show that the partial pressure of oxygen affects the composition and growth orientation of the thin films, and the (001) -oriented nano-sized V2 O5 thin films are sputtered at 0 4Pa oxygen partial pressure, ie, oriented vertically along the c-axis The film of V 2 O 5 was vacuum annealed to obtain a (0 0 1) -oriented VO2 thin film, and the crystal grains grew up. The molecular structure of the film and the lattice conversion during the annealing process were analyzed, and it was confirmed that the oxygen partial pressure affects the crystal structure of the thin film Impact