用高空间分辨本领的富利埃变换红外光谱研究了CZ法生长硅薄片中氧的沉淀.用此技术我们能探测到单个沉淀物的聚集所贡献的1230cm~(-1)处的吸收带.实验发现在1100℃退火80分钟就足以形成薄层盘形的SiO_2沉淀物.获得的样品中沉淀物的空间分布图表明这些沉淀物的分布是不均匀的,主要分别分布在离后表面和外延衬底界面约100μm距离内. The deposition of oxygen in CZ-grown silicon wafers was investigated by FTIR spectroscopy with high spatial resolving power.Using this technique we can detect the absorption band at 1230 cm -1 contributed by the aggregation of individual precipitates. It was found that annealing at 1100 ° C for 80 minutes was enough to form a thin disk-shaped SiO 2 precipitate.The spatial distribution of precipitates in the obtained samples showed that the distribution of these precipitates was inhomogeneous and mainly distributed on the back surface and in the extension The substrate interface is within about 100 [mu] m distance.