论文部分内容阅读
采用磁控溅射法制备了富硅氧化硅薄膜,然后分别经过一步热处理、两步热处理和快速热处理制备了镶嵌有硅纳米晶的氧化硅薄膜.实验结果表明,在硅含量为～42.63 at.%的富硅氧化硅薄膜中,三种热处理均能形成10~(12)/cm~2量级的硅纳米晶.其中在两步热处理中,硅纳米晶的密度最高,达到2.2×10~(12)/cm~2,并且尺寸均匀、结晶完整性好;一步热处理后的样品中,硅纳米晶密度较低,并且部分纳米晶结晶不充分;快速热处理后的样品中,硅纳米晶密度最低、尺寸分布不均匀,并且存在孪晶结构.分析认为,热处理初始阶段的形核过程对纳米晶的密度及微观结构有着重要的影响,两步热处理中的低温段促进了纳米晶的成核,有助于形成高密度高质量硅纳米晶.
Silicon-rich silicon oxide films were prepared by magnetron sputtering and then silicon oxide films with silicon nanocrystals were prepared by one-step heat treatment, two-step heat treatment and rapid thermal annealing respectively. The experimental results show that the silicon content is ~ 42.63 at. % Of silicon-rich silicon oxide films, three kinds of heat treatment can form silicon nanocrystals of the order of 10 ~ (12) / cm ~ 2, in which the density of silicon nanocrystals reaches the highest in 2.2 × 10 ~ (12) / cm ~ 2, with uniform size and good crystal integrity. In the sample after one-step heat treatment, the density of silicon nanocrystals is low and part of the nanocrystals are not crystallized adequately. In the samples after rapid thermal treatment, the density of silicon nanocrystals The results show that the nucleation process at the initial stage of heat treatment has an important influence on the density and microstructure of the nanocrystals. The low temperature in the two-step heat treatment promotes the nucleation of the nanocrystals , Help to form high-density high-quality silicon nanocrystals.