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硅通孔技术是三维集成电路中堆叠芯片实现互连的一种新的技术解决方案。本文介绍了TSV的制作与填充技术,通过优化ICP刻蚀工艺,实现了上口尺寸14.41μm、下口尺寸8.83μm、深度331.0μm、深宽比大于20:1的高深宽比通孔的制作;利用LPCVD工艺在通孔内沉积的重掺杂多晶硅作为电极引线实现电气互连,并对通孔进行了电阻特性的测试,测试结果表明,通孔阻值约为25Ω,通孔互连的电学特性较好。
TSV technology is a new technology solution for stacking chips in 3D integrated circuits for interconnection. This paper introduces the fabrication and filling technology of TSV. By optimizing the ICP etching process, the fabrication of high aspect ratio vias with 14.41μm aperture, 8.83μm aperture, 331.0μm depth and 20: 1 aspect ratio ; The use of LPCVD process deposited in the through-hole of heavily doped polysilicon as the electrode leads to achieve electrical interconnection and resistance characteristics of the through-hole test, the test results show that the through-hole resistance of about 25Ω, through-hole interconnection Good electrical characteristics.