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A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistan ce on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance △R/R through an integral(the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object)and compare the theoretical values with the experimental results.Compared with the traditional method,this novel calculation method is moreaccurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.
A novel algorithmic method, based on the different stress distribution on the surface of thin film in an SOI microstructure, is put forward to calculate the value of the silicon piezoresistance ce ce on the sensitive film. In the proposed method, we take the Ritz method as an initial theoretical model to calculate the rate of piezoresistance ΔR / R through an integral (the closed area Ω where the surface piezoresistance of the film lies as the integral area and the product of stress σ and piezoresistive coefficient π as the integral object) and compare the theoretical values with the experimental results. Compared with the traditional method, this novel calculation method is moreaccurate when applied to calculating the value of the silicon piezoresistance on the sensitive film of an SOI pieoresistive pressure sensor.